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Mona re bonts'a mekhoa ea ho kolobisa e susumetsoang ke ho imbibition, e itlelang feela le e khethang ea li-alloys tsa tšepe tse thehiloeng ho gallium holim'a libaka tse entsoeng ka tšepe tse nang le likarolo tse nyane tsa topographical.Li-alloys tsa tšepe tse thehiloeng ho Gallium ke lisebelisoa tse makatsang tse nang le tsitsipano e kholo holim'a metsi.Ka hona, ho thata ho li etsa lifilimi tse tšesaane.Ho kolobisa ka ho feletseng ha motsoako oa eutectic oa gallium le indium ho ile ha finyelloa holim'a metsi a koporo a microstructured ka pel'a mouoane oa HCl, o ileng oa tlosa oxide ea tlhaho ho motsoako oa tšepe oa metsi.Ho kolobisa hona ho hlalosoa ka lipalo ho ipapisitse le mofuta oa Wenzel le ts'ebetso ea osmosis, ho bonts'a hore boholo ba sebopeho sa microstructure bo bohlokoa bakeng sa ho kolobisa litšepe tse metsi ka lebaka la osmosis.Ho feta moo, re bonts'a hore ho kolobisa ka boithatelo ha litšepe tse metsi ho ka lebisoa ka mokhoa o ikhethileng libakeng tse nang le sebopeho se senyenyane holim'a tšepe ho etsa lipaterone.Mokhoa ona o bonolo o koahela le ho bopa tšepe e metsi holim'a libaka tse kholo ntle le matla a kantle kapa ho sebetsana ka thata.Re bonts'itse hore li-substrates tse entsoeng ka tšepe tse metsi li boloka likhokahano tsa motlakase leha li otlolohile le ka mor'a ho otlolla khafetsa.
Gallium based liquid metal alloys (GaLM) e hohetse tlhokomelo e ngata ka lebaka la thepa ea bona e khahlehang e kang sebaka se tlaase sa ho qhibiliha, motlakase o phahameng oa motlakase, viscosity e tlaase le phallo, chefo e tlaase le ho senyeha ho phahameng1,2.Gallium e hloekileng e na le ntlha e qhibilihang ea hoo e ka bang 30 ° C, 'me ha e kopanngoa ka metsoako ea eutectic le litšepe tse kang In le Sn, sebaka se qhibilihisang se ka tlase ho mocheso oa kamore.Li-GALM tse peli tsa bohlokoa ke gallium indium eutectic alloy (EGaIn, 75% Ga le 25% In ka boima ba 'mele, ntlha e qhibilihisang: 15.5 °C) le gallium indium tin eutectic alloy (GaInSn kapa galinstan, 68.5% Ga, 21.5% In, le 10). % thini, ntlha e qhibidihang: ~11 °C)1.2.Ka lebaka la ts'ebetso ea tsona ea motlakase nakong ea mokelikeli, li-GLM li ntse li fuputsoa ka matla e le litsela tsa elektroniki tse thata kapa tse senyehang bakeng sa lits'ebetso tse fapaneng, ho kenyeletsoa li-sensor tsa elektroniki3,4,5,6,7,8,9 10,11,12 , 13, 14 'me e etella pele 15, 16, 17. Ho etsoa ha lisebelisoa tse joalo ka ho beha, ho hatisa, le ho etsa mohlala ho tloha ho GaLM ho hloka tsebo le taolo ea thepa ea lifahleho tsa GaLM le substrate ea eona e ka tlaase.Li-GALM li na le tsitsipano e phahameng holim'a metsi (624 mNm-1 bakeng sa EGaIn18,19 le 534 mNm-1 bakeng sa Galinstan20,21) e ka etsang hore ho be thata ho sebetsana kapa ho e laola.Ho thehoa ha karolo e thata ea tlhaho ea gallium oxide holim'a GaLM tlas'a maemo a potolohileng ho fana ka khetla e tsitsitseng GaLM ka sebopeho se se nang spherical.Thepa ena e lumella GaLM hore e hatisoe, e kenngoe ka har'a li-microchannels, 'me e tšoanngoe ka botsitso ba sefahleho bo fihlelletsoeng ke oxides19,22,23,24,25,26,27.Khetla e thata ea oxide e boetse e lumella GaLM ho khomarela libaka tse ngata tse boreleli, empa e thibela litšepe tse tlase tsa viscosity ho phalla ka bolokolohi.Ho phatlalatsoa ha GaLM libakeng tse ngata ho hloka matla ho senya khetla ea oxide28,29.
Likhetla tsa oksijene li ka tlosoa ka, mohlala, li-acids tse matla kapa metheo.Ha li-oxide li le sieo, GaLM e etsa marotholi hoo e ka bang libakeng tsohle ka lebaka la tsitsipano e kholo ea holim'a eona, empa ho na le mekhelo: GaLM e kolobisa likaroloana tsa tšepe.Ga e theha maqhama a metallic le lisebelisoa tse ling ka mokhoa o tsejoang e le "reactive wetting"30,31,32.Hangata ho kolobisoa hona ho hlahlobjoa ha ho se na li-oxide tsa holim'a metsi ho thusa ho kopana ha tšepe le tšepe.Leha ho le joalo, leha ho na le li-oxide tsa tlhaho tsa GaLM, ho tlalehiloe hore likhokahano tsa tšepe le tšepe li theha ha li-oxide li robeha ha li kopana le libaka tse boreleli tsa tšepe29.Ho kolobisa ka mokhoa o ts'oanelang ho fella ka li-angles tse tlase tsa ho kopana le ho kolobisa hantle ha likarolo tse ngata tsa tšepe33,34,35.
Ho fihla hajoale, ho entsoe liphuputso tse ngata mabapi le ts'ebeliso ea thepa e ntle ea ho kolobisa ka matla ha GaLM ka litšepe ho theha paterone ea GaLM.Ka mohlala, GaLM e 'nile ea sebelisoa ho mekhoa ea tšepe e tiileng ea mohlala ka ho tlotsa, ho roala, ho fafatsa, kapa ho pata ha moriti34, 35, 36, 37, 38. Ho kolobisa ka mokhoa o ikhethileng oa GaLM ka litšepe tse thata ho lumella GaLM ho theha mekhoa e tsitsitseng le e hlalositsoeng hantle.Leha ho le joalo, tsitsipano e phahameng ea holim'a GaLM e sitisa ho etsoa ha lifilimi tse tšesaane tse ts'oanang haholo esita le ho li-substrates tsa tšepe.Ho rarolla bothata bona, Lacour et al.e tlalehile mokhoa oa ho hlahisa lifilimi tse tšesaane tsa GaLM tse boreleli, tse bataletseng holim'a libaka tse kholo ka ho moafatsa gallium e hloekileng holim'a li-microstructured substrates tse koahetsoeng ka khauta37,39.Mokhoa ona o hloka vacuum deposition, e liehang haholo.Ho feta moo, GaLM ha e lumelloe ka kakaretso bakeng sa lisebelisoa tse joalo ka lebaka la ho khoneha ho embrittlement40.Mouoane o boetse o beha thepa holim'a substrate, kahoo mohlala oa hlokahala ho etsa paterone.Re batla mokhoa oa ho theha lifilimi le lipaterone tsa GaLM tse boreleli ka ho rala likarolo tsa tšepe tsa topographic tseo GaLM e li kolobisang ka boithatelo le ka boikhethelo ha ho se na li-oxide tsa tlhaho.Mona re tlaleha mokhoa o ikhethileng oa ho koloba oa EGaIn e se nang oxide (e tloaelehileng GaLM) e sebelisa mokhoa o ikhethileng oa ho kolobisa likaroloana tsa tšepe tse hlophisitsoeng ka mokhoa oa photolithographically.Re theha meaho e hlalositsoeng ka holimo ea photolithographically maemong a manyane ho ithuta ho imbibition, ka hona re laola ho koloba ha litšepe tsa metsi tse se nang oxide.Thepa e ntlafalitsoeng ea ho koloba ea EGaIn holim'a litšepe tse nang le microstructured e hlalosoa ke tlhahlobo ea lipalo e thehiloeng ho mohlala oa Wenzel le ts'ebetso ea ho kenya letsoho.Qetellong, re bonts'a sebaka se seholo sa ho bea le ho etsa mohlala oa EGaIn ka ho inha, ho itlela feela le ho khetha ho koloba holim'a litšepe tse nang le microstructured.Li-electrode tsa tensile le li-gauge tsa khatello tse kenyelletsang meaho ea EGaIn li hlahisoa e le lits'ebetso tse ka bang teng.
Ho monya ke lipalangoang tsa capillary moo mokelikeli o kenang holim'a sebopeho sa 41, se thusang ho ata ha mokelikeli.Re ile ra batlisisa mokhoa oa ho kolobisa oa EGaIn holim'a litšepe tse nang le microstructured tse kentsoeng mouoane oa HCl (Setšoantšo sa 1).Koporo e ile ea khethoa e le tšepe bakeng sa bokaholimo bo ka tlaase. Libakeng tse bataletseng tsa koporo, EGaIn e ne e bontša sebaka se tlaase sa ho kopana sa <20 ° ka pel'a mouoane oa HCl, ka lebaka la ho koloba ha metsi31 (Supplementary Fig. 1). Libakeng tse bataletseng tsa koporo, EGaIn e ne e bontša sebaka se tlaase sa ho kopana sa <20 ° ka pel'a mouoane oa HCl, ka lebaka la ho koloba ha metsi31 (Supplementary Fig. 1). На плоских медных поверхностях EGaIn показал низкий краевой угол <20 ° в присутствии паров HCl из-за реактивного смачиванивания31 (дополни1) . Libakeng tse bataletseng tsa koporo, EGaIn e bonts'itse karolo e tlase ea <20° ea ho kopana le mouoane oa HCl ka lebaka la ho koloba ha metsi31 (Setšoantšo sa Tlatsetso 1).在平坦的铜表面上，由于反应润湿，EGaIn 在存在HCl 蒸气的情况下显示<20° 的低接触角31（角31).在平坦的铜表面上，由于反应润湿，EGaIn在存在HCl На плоских медных поверхностях EGaIn демонстрирует низкие краевые углы <20 ° в присутствии паров HCl из-за реактивного смальпивания (1) . Likamoreng tsa koporo tse bataletseng, EGaIn e bonts'a li-angles tse tlase tsa <20° ka pel'a mouoane oa HCl ka lebaka la ho koloba ka matla (Setšoantšo sa Tlatsetso 1).Re ile ra lekanya li-angles tse haufi tsa EGaIn ka koporo e ngata le lifiliming tsa koporo tse kentsoeng ho polydimethylsiloxane (PDMS).
a Columnar (D (diameter) = l (bohole) = 25 µm, d (sebaka pakeng tsa litšiea) = 50 µm, H (bophahamo) = 25 µm) le pyramidal (bophara = 25 µm, bophahamo = 18 µm) libopeho tse nyenyane ho Cu / PDMS substrates.b Liphetoho tse itšetlehileng ka nako ka lehlakoreng la ho kopana le li-substrates tse sephara (tse se nang microstructures) le lihlopha tsa litšiea le liphiramide tse nang le PDMS e koahetsoeng ka koporo.c, d Ho rekota ka nako ea (c) pono ea lehlakore le (d) pono e ka holimo ea EGaIn e kolobisang ka holim'a metsi ka litšiea boteng ba mouoane oa HCl.
Ho hlahloba phello ea topography holim'a ho kolobisa, li-substrates tsa PDMS tse nang le columnar le pyramidal pattern li ile tsa lokisoa, moo koporo e neng e kenngoa ka lera la sekhomaretsi sa titanium (setšoantšo sa 1a).Ho ile ha bontšoa hore sebaka sa microstructured sa substrate ea PDMS se ne se koahetsoe ka koporo (Supplementary Fig. 2).Li-angles tse itšetlehileng ka nako tsa EGaIn ho PDMS e entsoeng ka koporo (Cu/PDMS) e entsoeng ka mokhoa o hlophisitsoeng le ea planar (Cu/PDMS) e bontšoa ho Feiga.1b.Khokahano ea EGaIn ho copper/PDMS ea mohlala e theohela ho 0° nakong ea ~1 min.Mokhoa o ntlafetseng oa ho koloba oa EGaIn microstructures o ka sebelisoa ke Wenzel equation\({{{\rm{cos}}}}}}\,{\theta}_{{rough}}=r\,{{{{{ \rm{cos}}}}}}\,{\theta}_{0}\), moo \({\theta}_{{rough}}\) e emelang angle ea ho kopana ea sebaka se makukuno, \ (r \) Bokhopo ba Bokahohle (= sebaka sa sebele/sebaka se bonahalang) le lehlakoreng la ho kopana sefofaneng \({\theta}_{0}\).Liphetho tsa ho koloba ka mokhoa o ntlafalitsoeng oa EGaIn libakeng tse nang le paterone li lumellana hantle le mohlala oa Wenzel, kaha boleng ba r bakeng sa bokamorao ba sebopeho sa piramidi ke 1.78 le 1.73, ka ho latellana.Sena se boetse se bolela hore lerotholi la EGaIn le lutseng sebakeng se nang le mohlala le tla kenella ka har'a li-grooves tsa liphallelo tse ka tlase.Ke habohlokoa ho hlokomela hore lifilimi tse bataletseng tse tšoanang haholo li thehoa tabeng ena, ho fapana le boemo ba EGaIn holim'a libaka tse sa tsitsang (Supplementary Fig. 1).
Ho tloha feiga.1c, d (Supplementary Movie 1) ho ka bonoa hore ka mor'a 30 s, ha lehlakoreng le bonahalang la ho kopana le atamela 0 °, EGaIn e qala ho arohana hole le moeli oa lerotholi, e bakoang ke ho monya (Supplementary Movie 2 le Supplementary). Setšoantšo sa 3).Lithuto tse fetileng tsa libaka tse bataletseng li amahantse sekala sa nako sa ho koloba ka matla le phetoho ho tloha ho inertial ho ea ho viscous wetting.Boholo ba sebaka ke e 'ngoe ea lintlha tse ka sehloohong tsa ho bona hore na ho itšepa hoa etsahala.Ka ho bapisa matla a holim'a metsi pele le ka morao ho imbibition ho tloha ponong ea thermodynamic, ho ile ha fumanoa angle ea bohlokoa ea ho kopana \({\theta}_{c}\)" (sheba Supplementary Discussion bakeng sa lintlha).Sephetho \({\theta}_{c}\) se hlalosoa e le \({{({({\rm{cos)))))))\,{\theta}_{c}=(1-{\) phi } _{S})/(r-{\phi}_{S})\) moo \({\phi}_{s}\) e emelang karoloana e kaholimo ho poso le \(r\) ) e emela bokaholimo ba bokaholimo. Imbibition e ka etsahala ha \({\theta }_{c}\) > \({\theta }_{0}\), ke hore, angle ea ho kopana sebakeng se bataletseng. Imbibition e ka etsahala ha \({\theta }_{c}\) > \({\theta }_{0}\), ke hore, angle ea ho kopana sebakeng se bataletseng. Впитывание может происходить, когда \ ({\ theta } _ {c} \) > \ ({\ theta } _ {0} \), т.е.контактный угол на плоской поверхности. Ho monya ho ka etsahala ha \({\theta }_{c}\) > \({\theta }_{0}\), ke hore, angle ea ho kopana sebakeng se bataletseng.当\({\theta }_{c}\) > \({\theta }_{0}\)，即平面上的接触角时，会发生吸吸。当\({\theta }_{c}\) > \({\theta }_{0}\)，即平面上的接触角时，会发生吸吸。 Всасывание происходит, когда \ ({\ theta} _ {c} \) > \ ({\ theta} _ {0} \), контактный угол на плоскости. Ho hula ho etsahala ha \({\theta }_{c}\) > \({\theta }_{0}\), ho kopana le lehlakoreng la sefofane.Bakeng sa libaka tse entsoeng ka morao, \(r\) le \({\phi}_{s}\) li baloa e le \(1+\{(2\pi {RH}))/{d}^{2} \ } \ ) le \(\pi {R}^{2}/{d}^{2}\), moo \(R\) e emelang radius ea kholomo, \(H\) e emelang bophahamo ba kholomo, le \ ( d \) ke sebaka se pakeng tsa litsi tsa litšiea tse peli (setšoantšo sa 1a).Bakeng sa sebaka se hlophisitsoeng ka morao ho feiga.1a, angle \({\theta}_{c}\) ke 60°, e leng kholo ho feta \({\theta}_{0}\) sefofane (~25° ) ho HCl vapor Oxide-free EGaIn ho Cu/PDMS.Ka hona, marotholi a EGaIn a ka hlasela habonolo sebaka se hlophisitsoeng sa koporo setšoantšong sa 1a ka lebaka la ho monya.
Ho batlisisa phello ea boholo ba topographic ea mohlala ho kolobisang le ho monyeng ha EGaIn, re ile ra fapanya boholo ba litšiea tse koahetsoeng ka koporo.Ka feiga.2 e bonts'a li-angles tsa ho ikopanya le ho monya ha EGaIn ho li-substrates tsena.Sebaka sa l pakeng tsa litšiea se lekana le bophara ba litšiea D 'me se tloha ho 25 ho ea ho 200 μm.Bophahamo ba 25 µm ha bo fetohe bakeng sa likholomo tsohle.\({\theta}_{c}\) e fokotseha ka boholo ba kholomo e ntseng e eketseha (Letlapa la 1), ho bolelang hore ho monya ha ho bonolo ho li-substrates tse nang le litšiea tse kholoanyane.Bakeng sa boholo bo lekiloeng, \({\theta}_{c}\) e kholo ho feta \({\theta}_{0}\)' me ho lebeletsoe hore ho be le wicking.Leha ho le joalo, ho monya ha hoa hlokomeloa bakeng sa libaka tse entsoeng ka morao ka l le D 200 µm (setšoantšo sa 2e).
EGaIn e itšetlehileng ka nako e holim'a Cu/PDMS e nang le litšiea tsa boholo bo fapaneng ka mor'a ho pepesehela mouoane oa HCl.b–e Maikutlo a holimo le a mahlakoreng a EGaIn wetting.b D = l = 25 µm, r = 1,78.ho D = l = 50 μm, r = 1,39.dD = l = 100 µm, r = 1,20.eD = l = 200 µm, r = 1.10.Liposo tsohle li na le bolelele ba 25 µm.Litšoantšo tsena li nkuoe bonyane metsotso e 15 ka mor'a ho pepesehela mouoane oa HCl.Marotholi a EGaIn ke metsi a bakoang ke karabelo lipakeng tsa gallium oxide le mouoane oa HCl.Likarolo tsohle tsa sekala ho (b – e) ke 2 mm.
Tsela e 'ngoe ea ho fumana monyetla oa ho monya metsi ke ho lokisa mokelikeli holim'a metsi ka mor'a hore mohlala o sebelisoe.Kurbin le al.Ho tlalehiloe hore ha (1) li-post li phahame ka ho lekaneng, marotholi a tla kenngoa ke bokaholimo ba mohlala;(2) sebaka se pakeng tsa litšiea se batla se le senyenyane;le (3) sebaka sa ho kopana sa mokelikeli holim'a metsi se senyenyane ka ho lekaneng42.Ka lipalo \({\theta}_{0}\) ea mokelikeli sefofaneng se nang le thepa e tšoanang ea substrate e tlameha ho ba ka tlase ho ntlha ea bohlokoa ea ho kopanya bakeng sa pinning, \({\theta}_{c,{pin))} \ ), bakeng sa ho monya ntle le ho penya lipakeng tsa melaetsa, moo \({\theta}_{c,{pin}}={{{{\rm{arctan}}}}}}(H/\big \{ ( \ sqrt {2}-1)l\big\})\) (sheba puisano e eketsehileng bakeng sa lintlha).Boleng ba \({\theta}_{c,{pin}}\) bo itšetlehile ka boholo ba phini (Letlapa la 1).Etsa qeto ea parameter e se nang dimension L = l/H ho ahlola hore na ho monya ho etsahala.Bakeng sa ho monya, L e tlameha ho ba ka tlase ho tekanyo ea moeli, \({L}_{c}\) = 1/\(\big\{\big(\sqrt{2}-1\big){{\ tan} } {\ theta}_{{0}\kholo\}\).Bakeng sa EGaIn \({\theta}_{0}={25}^{\circ})\) e holim'a substrate ea koporo \({L}_{c}\) ke 5.2.Kaha kholomo ea L ea 200 μm ke 8, e kholo ho feta boleng ba \({L}_{c}\), ho monya ha EGaIn ha ho etsahale.E le ho hlahloba ka ho eketsehileng phello ea geometry, re ile ra hlokomela ho iketsetsa lihlahisoa tse fapa-fapaneng tsa H le l (Supplementary Fig. 5 le Supplementary Table 1).Liphetho li lumellana hantle le lipalo tsa rona.Kahoo, L e fetoha selelekela se sebetsang sa ho monya;mokelikeli oa tšepe o khaotsa ho monya ka lebaka la ho penya ha sebaka se pakeng tsa litšiea se batla se le seholo ha se bapisoa le bophahamo ba litšiea.
Boemo ba metsi bo ka khethoa ho latela sebopeho sa bokaholimo ba substrate.Re ile ra batlisisa phello ea sebopeho sa holim'a metsi le ho kenngoa ha EGaIn ka ho kopanya Si le Cu holim'a litšiea le lifofane (Supplementary Fig. 6).Lekhalo la ho kopana le EGaIn le fokotseha ho tloha ~ 160 ° ho ea ~ 80 ° ha Si/Cu binary surface e eketseha ho tloha ho 0 ho ea ho 75% ka koporo e bataletseng.Bakeng sa sebaka sa 75% Cu/25% Si, \({\theta}_{0}\) ke ~80°, e tsamaellanang le \({L}_{c}\) e lekanang le 0.43 ho latela tlhaloso e ka holimo. .Hobane litšiea l = H = 25 μm le L e lekanang le 1 e kholo ho feta moeli \({L}_{c}\), karolo ea 75% Cu / 25% Si ka mor'a ho etsa mohlala ha e monye ka lebaka la ho se sebetse.Ho tloha ha sekhahla sa ho kopana sa EGaIn se eketseha ka ho eketsoa ha Si, H kapa tlase l ea hlokahala ho hlola pinning le ho ima.Ka hona, kaha angle ea ho kopana (e leng \({\theta}_{0}\)) e itšetlehile ka metsoako ea lik'hemik'hale e holim'a metsi, e ka boela ea fumana hore na imbibition e etsahala ho microstructure.
Ho monya ha EGaIn ho koporo e entsoeng ka mohlala / PDMS ho ka kolobisa tšepe e metsi hore e be lipaterone tse molemo.E le ho hlahloba palo e fokolang ea mela e mengata e bakang ho imbibition, thepa ea ho kolobisa ea EGaIn e ile ea hlokomeloa ho Cu / PDMS e nang le mela ea morao-rao e nang le linomoro tse fapaneng tsa likholomo ho tloha ho 1 ho ea ho 101 (setšoantšo sa 3).Ho kolobisa haholo ho etsahala sebakeng sa post-patterning.EGaIn wicking e ile ea hlokomeloa ka botšepehi 'me bolelele ba ho qhoqhoa bo ile ba eketseha ka palo ea mela ea litšiea.Ho monya ha ho mohla ho etsahalang ha ho na le li-post tse nang le mela e 'meli kapa ka tlase.Sena se ka bakoa ke ho eketseha ha khatello ea capillary.Bakeng sa ho monya ho etsahala ka mokhoa oa columnar, khatello ea capillary e bakoang ke ho kobeha ha hlooho ea EGaIn e tlameha ho hlōloa (Supplementary Fig. 7).Ho nka radius ea kobeha ea 12.5 µm bakeng sa hlooho e le 'ngoe ea EGaIn e nang le mohlala oa kholomo, khatello ea capillary ke ~0.98 atm (~740 Torr).Khatello ena e phahameng ea Laplace e ka thibela ho koloba ho bakoang ke ho monya EGaIn.Hape, mela e fokolang ea litšiea e ka fokotsa matla a ho monya a bakoang ke ketso ea capillary pakeng tsa EGaIn le likholomo.
a Marotholi a EGaIn ho Cu/PDMS e hlophisitsoeng e nang le lipaterone tsa bophara bo fapaneng (w) moeeng (pele a pepesehela mouoane oa HCl).Mela ea liraka ho tloha holimo: 101 (w = 5025 µm), 51 (w = 2525 µm), 21 (w = 1025 µm), le 11 (w = 525 µm).b Ho kolobisa EGaIn ka (a) kamora ho ba mouoane oa HCl bakeng sa metsotso e 10.c, d Ho koloba ha EGaIn ho Cu/PDMS ka meaho ea kholomo (c) mela e ’meli (w = 75 µm) le (d) mola o le mong (w = 25 µm).Litšoantšo tsena li nkuoe metsotso e 10 ka mor'a ho pepesehela mouoane oa HCl.Mehala ea sekala ho (a, b) le (c, d) ke 5 mm le 200 µm, ka ho latellana.Metsu ho (c) e bontša ho kobeha ha hlooho ea EGaIn ka lebaka la ho monya.
Ho kenngoa ha EGaIn ho Cu / PDMS ea post-patterned ho lumella EGaIn hore e thehoe ka ho khetha metsi (setšoantšo sa 4).Ha lerotholi la EGaIn le behiloe sebakeng se nang le mohlala 'me le pepesehetse mouoane oa HCl, lerotholi la EGaIn le oa pele, le etsa angle e nyenyane ea ho kopana ha asiti e tlosa sekala.Ka mor'a moo, ho monya ho qala ho tloha pheletsong ea lerotholi.Sebopeho sa sebaka se seholo se ka finyelloa ho tloha ho centimeter-scale EGaIn (setšoantšo sa 4a, c).Kaha ho monya ho etsahala feela sebakeng sa topographic, EGaIn e kolobisa feela sebaka sa mohlala mme e batla e emisa ho koloba ha e fihla sebakeng se bataletseng.Ka lebaka leo, meeli e bohale ea mekhoa ea EGaIn e hlokomeloa (setšoantšo sa 4d, e).Ka feiga.4b e bontša kamoo EGaIn e hlaselang sebaka se sa hlophisoang, haholo-holo ho potoloha sebaka seo lerotholi la EGaIn le neng le behiloe ho sona qalong.Lebaka ke hobane bophara bo bonyenyane ka ho fetisisa ba marotholi a EGaIn a sebelisitsoeng thutong ena bo ne bo feta bophara ba litlhaku tse entsoeng ka mokhoa.Marotholi a EGaIn a ile a behoa setšeng sa mohlala ka ente ea letsoho ka nale le syringe ea 27-G, e leng se hlahisang marotholi a nang le boholo ba bonyane ba 1 mm.Bothata bona bo ka rarolloa ka ho sebelisa marotholi a manyane a EGaIn.Ka kakaretso, Setšoantšo sa 4 se bonts'a hore ho koloba ka tšohanyetso ha EGaIn ho ka susumetsoa le ho lebisoa libakeng tse nang le microstructured.Ha ho bapisoa le mosebetsi o fetileng, mokhoa ona oa ho kolobisa o batla o potlakile 'me ha ho na matla a ka ntle a hlokahalang ho finyella ho koloba ka ho feletseng (Letlapa la Tlatsetso 2).
letšoao la univesithi, tlhaku b, c ka sebopeho sa lehalima.Sebaka se monyang se koahetsoe ke litšiea tse ngata tse nang le D = l = 25 µm.d, litšoantšo tse atolositsoeng tsa likhopo ka e (c).Sekala ho (a–c) le (d, e) ke 5 mm le 500 µm, ka ho latellana.Holisitsoe (c–e), marotholi a manyane a ka holim'a metsi ka mor'a hore adsorption a fetohe metsi ka lebaka la karabelo e teng lipakeng tsa gallium oxide le mouoane oa HCl.Ha ho phello e kholo ea sebopeho sa metsi holim'a ho kolobisa e ileng ea bonoa.Metsi a tlosoa habonolo ka mokhoa o bonolo oa ho omisa.
Ka lebaka la mofuta oa mokelikeli oa EGaIn, EGaIn e koahetsoeng ke Cu/PDMS (EGaIn/Cu/PDMS) e ka sebelisoa bakeng sa li-electrode tse tenyetsehang le tse otlohang.Setšoantšo sa 5a se bapisa liphetoho tsa ho hanyetsa tsa Cu / PDMS ea pele le EGaIn / Cu / PDMS tlas'a meroalo e fapaneng.Ho hanyetsa ha Cu / PDMS ho phahama haholo ka tsitsipano, ha khanyetso ea EGaIn / Cu / PDMS e ntse e le tlaase ho tsitsipano.Ka feiga.5b le d li bonts'a litšoantšo tsa SEM le lintlha tse tsamaellanang tsa EMF tsa Cu/PDMS e tala le EGaIn/Cu/PDMS pele le ka morao ho kopo ea motlakase.Bakeng sa Cu/PDMS e sa fetoheng, deformation e ka baka mapetsong a filimi e thata ea Cu e kentsoeng ho PDMS ka lebaka la ho se lumellane ha elasticity.Ka lehlakoreng le leng, bakeng sa EGaIn/Cu/PDMS, EGaIn e ntse e aparela Cu/PDMS substrate hantle 'me e boloka ts'ebetso ea motlakase ntle le mapetsong leha e le afe kapa ho senyeha ho hoholo le ka mor'a hore ho be le khatello.Lintlha tsa EDS li netefalitse hore gallium le indium ho tloha EGaIn li ne li ajoa ka ho lekana ho substrate ea Cu/PDMS.Hoa hlokomeleha hore botenya ba filimi ea EGaIn bo tšoana ebile bo bapisoa le bophahamo ba litšiea. Sena se boetse se tiisoa ke tlhahlobo e eketsehileng ea topographical, moo phapang e lekanyelitsoeng pakeng tsa botenya ba filimi ea EGaIn le bophahamo ba poso ke <10% (Supplementary Fig. 8 le Letlapa la 3). Sena se boetse se tiisoa ke tlhahlobo e eketsehileng ea topographical, moo phapang e lekanyelitsoeng pakeng tsa botenya ba filimi ea EGaIn le bophahamo ba poso ke <10% (Supplementary Fig. 8 le Letlapa la 3). Это также подтверждается дальнейшим топографическим анализом, где относительная разница между толщиной пленки EGaIn и выпльзото % ьный рис le tatellano ea 3). Sena se boetse se tiisoa ke tlhahlobo e eketsehileng ea boemo ba leholimo, moo phapang e lekanyelitsoeng pakeng tsa botenya ba filimi ea EGaIn le bophahamo ba kholomo ke <10% (Supplementary Fig. 8 le Letlapa la 3).进一步的形貌分析也证实了這一点，其中EGaIn 薄膜厚度与柱子高度之间的相对差异 <10%血 <10% Это также было подтверждено дальнейшим топографическим анализом, где относительная разница между толщиной пленки EGaIn & lt; ьный рис le tatellano ea 3). Sena se ile sa boela sa tiisoa ke tlhahlobo e eketsehileng ea boemo ba leholimo, moo phapang e lekanyelitsoeng pakeng tsa botenya ba filimi ea EGaIn le bophahamo ba kholomo e ne e le <10% (Supplementary Fig. 8 le Letlapa la 3).Ho kolobisa hona ho thehiloeng ho imbibition ho lumella botenya ba liphahlo tsa EGaIn hore li laoloe hantle le ho bolokoa li tsitsitse libakeng tse kholo, tseo ho seng joalo li leng phephetso ka lebaka la tlhaho ea eona ea mokelikeli.Lipalo 5c le e bapisa conductivity le ho hanyetsa deformation ea Cu/PDMS ea pele le EGaIn/Cu/PDMS.Ho demo, LED e ile ea buloa ha e hokahane le li-electrode tsa Cu/PDMS kapa EGaIn/Cu/PDMS tse sa kang tsa angoa.Ha Cu/PDMS e sa fetoheng e otlolloa, LED ea tima.Leha ho le joalo, li-electrode tsa EGaIn/Cu/PDMS li ile tsa lula li hokahane ka motlakase esita le tlas’a mojaro, ’me lebone la LED le ile la fifala hanyenyane feela ka lebaka la ho eketseha ha matla a li-electrode.
phetoho e tloaelehileng ea ho hanyetsa ka mojaro o ntseng o eketseha ho Cu/PDMS le EGaIn/Cu/PDMS.b, d litšoantšo tsa SEM le tlhahlobo ea matla a dispersive X-ray spectroscopy (EDS) pele (holimo) le ka morao (tlase) polydiplexes e kentsoeng ka (b) Cu/PDMS le (d) EGaIn/Cu/methylsiloxane.c, e li-LED tse khomaretsoeng ho (c) Cu/PDMS le (e) EGaIn/Cu/PDMS pele (holimo) le ka morao (ka tlaase) ho otlolla (~ 30% khatello ea maikutlo).Sekala ho (b) le (d) ke 50 µm.
Ka feiga.6a e bonts'a khanyetso ea EGaIn/Cu/PDMS e le ts'ebetso ea khatello ho tloha ho 0% ho isa ho 70%.Keketseho le ho hlaphoheloa ha khanyetso e lekana le deformation, e lumellanang hantle le molao oa Pouillet bakeng sa thepa e sa tsitsang (R / R0 = (1 + ε) 2), moo R e leng khanyetso, R0 ke khanyetso ea pele, ε ke khatello ea 43. Liphuputso tse ling li bontšitse hore ha li otlolloa, likaroloana tse tiileng sebakeng sa mokelikeli li ka itlhophisa hape 'me tsa aroloa ka ho lekana ka momahano e ntlafetseng, kahoo tsa fokotsa keketseho ea ho hula 43, 44 . Leha ho le joalo, mosebetsing ona, mokhanni ke> 99% ea tšepe ea metsi ka molumo ho tloha ha lifilimi tsa Cu li le 100 nm feela. Leha ho le joalo, mosebetsing ona, mokhanni ke> 99% ea tšepe ea metsi ka molumo ho tloha ha lifilimi tsa Cu li le 100 nm feela. Однако в этой работе проводник состоит из >99% жидкого металла по объему, так как пленки Cu имеют толщину всего 100 нм. Leha ho le joalo, mosebetsing ona, mokhanni o na le> 99% ea tšepe ea metsi ka molumo, kaha lifilimi tsa Cu li na le 100 nm feela.然而，在這项工作中，由于Cu 薄膜只有100 nm 厚，因此导体是>99% 的液态金属（按体积计）.然而，在這项工作中，由于Cu 薄膜只有100 nm 厚，因此导体是>99%Leha ho le joalo, mosebetsing ona, kaha filimi ea Cu e boima ba 100 nm feela, mokhanni o na le tšepe e fetang 99% ea metsi (ka molumo).Ka hona, ha rea ​​lebella hore Cu e tla kenya letsoho haholo ho thepa ea electromechanical ea li-conductor.
Phetoho e tloahelehileng ho EGaIn/Cu/PDMS ho hanyetsa khahlano le khatello ea maemo a 0-70%.Khatello e phahameng ea khatello e fihletsoeng pele ho hlōleha ha PDMS e ne e le 70% (Supplementary Fig. 9).Matheba a khubelu ke litekanyetso tsa theory tse boletsoeng esale pele ke molao oa Puet.b Teko ea botsitso ba EGaIn/Cu/PDMS nakong ea lipotoloho tse otlollang khafetsa.Ho ile ha sebelisoa mofuta oa 30% tekong ea cyclic.Sekhahla sa sekala se kentsoeng ke 0.5 cm.L ke bolelele ba pele ba EGaIn/Cu/PDMS pele o otlolla.
Ntho ea ho lekanya (GF) e hlalosa kutloisiso ea kutlo 'me e hlalosoa e le karo-karolelano ea phetoho ea ho hanyetsa phetoho ho strain45.GF e eketsehile ho tloha 1.7 ho 10% khatello ho ea ho 2.6 ho 70% khatello ka lebaka la phetoho ea geometri ea tšepe.Ha ho bapisoa le li-gauge tse ling, boleng ba GF EGaIn/Cu/PDMS bo itekanetse.Joaloka sensor, le hoja GF ea eona e ka 'na ea se ke ea phahama ka ho khetheha, EGaIn / Cu / PDMS e bonts'a phetoho e matla ea ho hanyetsa ka lebaka la pontšo e tlaase ea molumo oa lerata.Ho lekola botsitso ba conductivity ea EGaIn/Cu/PDMS, khanyetso ea motlakase e ile ea shejoa nakong ea lipotoloho tse otlollang khafetsa ho 30% khatello.Joalokaha ho bontšitsoe feiga.6b, ka mor'a hore 4000 e otlolle lipotoloho, boleng ba ho hanyetsa bo ile ba lula bo le ka har'a 10%, e ka 'nang ea e-ba ka lebaka la ho thehoa ha tekanyo e tsoelang pele nakong ea ho otlolla khafetsa46.Ka hona, botsitso ba nako e telele ba motlakase oa EGaIn / Cu / PDMS e le electrode e otlolohileng le ho tšepahala ha pontšo e le tekanyo ea khatello e tiisitsoe.
Sehloohong sena, re tšohla mekhoa e ntlafetseng ea ho kenya metsi ea GaLM holim'a tšepe e entsoeng ka microstructured e bakoang ke ho kenella.Ho kolobisa ka ho feletseng ha EGaIn ho fihletsoe holim'a tšepe e kholo le ea pyramidal boteng ba mouoane oa HCl.Sena se ka hlalosoa ka lipalo ho latela mohlala oa Wenzel le ts'ebetso ea wicking, e bonts'ang boholo ba post-microstructure e hlokahalang bakeng sa ho kolobisa ka lebaka la wicking.Ho kolobisa ka boithatelo le ho khetha ha EGaIn, e tataisoang ke tšepe e nang le microstructured, e etsa hore ho khonehe ho sebelisa liphahlo tse tšoanang holim'a libaka tse kholo le ho etsa mekhoa ea tšepe ea metsi.Li-substrates tsa EGaIn-coated Cu/PDMS li boloka likhokahano tsa motlakase le ha li otlolloa le ka mor'a lipotoloho tse otlolohileng khafetsa, joalo ka ha ho netefalitsoe ke SEM, EDS, le litekanyo tsa ho hanyetsa motlakase.Ho feta moo, khanyetso ea motlakase ea Cu/PDMS e koahetsoeng ka EGaIn e fetoha ka mokhoa o ts'oanelang le ka ts'epahalo ho ea ka khatello e sebelisitsoeng, e bonts'a ts'ebeliso ea eona e ka bang teng joalo ka sensor ea khatello.Melemo e ka khonehang e fanoang ke molao-motheo oa ho kolobisa tšepe o bakoang ke ho imbibition ke ka tsela e latelang: (1) Ho roala ha GaLM le ho etsa mohlala ho ka finyelloa ntle le matla a ka ntle;(2) GaLM e kolobisang holim'a microstructure e koahetsoeng ka koporo ke thermodynamic.filimi ea GaLM e hlahisoang e tsitsitse esita le tlas'a deformation;(3) ho fetola bophahamo ba mohala o koahetsoeng ka koporo ho ka etsa filimi ea GaLM e nang le botenya bo laoloang.Ho phaella moo, mokhoa ona o fokotsa palo ea GaLM e hlokahalang ho theha filimi, kaha litšiea li nka karolo ea filimi.Ka mohlala, ha ho hlahisoa letoto la litšiea tse bophara ba 200 μm (le sebaka se pakeng tsa litšiea tsa 25 μm), molumo oa GaLM o hlokahalang bakeng sa ho etsoa ha filimi (~ 9 μm3 / μm2) o bapisoa le molumo oa filimi ntle le ho etsa mohlala. litšiea.(25 µm3/µm2).Leha ho le joalo, tabeng ena, ho tlameha ho nahanoa hore khanyetso ea theory, e hakantsoeng ho ea ka molao oa Puet, e boetse e eketseha ka makhetlo a robong.Ka kakaretso, thepa e ikhethang ea ho koloba ea litšepe tsa metsi tse tšohliloeng sehloohong sena li fana ka mokhoa o sebetsang oa ho beha litšepe tsa metsi holim'a mefuta e fapaneng ea li-substrates bakeng sa lisebelisoa tsa elektroniki tse otlollang le lits'ebetso tse ling tse hlahang.
Li-substrates tsa PDMS li ile tsa lokisoa ka ho tsoaka matrix a Sylgard 184 (Dow Corning, USA) le harderer ka karolelano ea 10:1 le 15:1 bakeng sa liteko tsa tensile, tse lateloang ke ho phekola ka ontong ka 60°C.Koporo kapa silicon e ne e kentsoe holim'a liphaephe tsa silicon (Silicon Wafer, Namkang High Technology Co., Ltd., Rephabliki ea Korea) le li-substrates tsa PDMS tse nang le lera la sekhomaretsi sa titanium sa 10 nm se sebelisang mokhoa o tloaelehileng oa ho fafatsa.Mehaho ea li-columnar le pyramidal li behiloe holim'a karoloana ea PDMS ho sebelisoa mokhoa oa silicon wafer photolithographic.Bophara le bophahamo ba mohlala oa pyramidal ke 25 le 18 µm, ka ho latellana.Bophahamo ba paterone ea bar bo ne bo tsitsitse ho 25 µm, 10 µm, le 1 µm, 'me bophara ba eona le bophahamo ba eona li fapane ho tloha ho 25 ho isa ho 200 µm.
Tsela ea ho kopana ea EGaIn (gallium 75.5% / indium 24.5%,> 99.99%, Sigma Aldrich, Rephabliki ea Korea) e ne e lekanyelitsoe ho sebelisa mochine oa ho theola sebopeho (DSA100S, KRUSS, Jeremane). Tsela ea ho kopana ea EGaIn (gallium 75.5% / indium 24.5%,> 99.99%, Sigma Aldrich, Rephabliki ea Korea) e ne e lekanyelitsoe ho sebelisa mochine oa ho theola sebopeho (DSA100S, KRUSS, Jeremane). Краевой угол EGaIn (галлий 75,5 %/индий 24,5 %, >99,99 %, Sigma Aldrich, Республика Корея) измеряли с помощью каплевидного аналинирсора, Каплевидного анали1000 Karolo e ka thōko ea EGaIn (gallium 75.5% / indium 24.5%, > 99.99%, Sigma Aldrich, Rephabliki ea Korea) e ne e lekantsoe ho sebelisoa mochine oa ho hlahloba marotholi (DSA100S, KRUSS, Jeremane). EGaIn（镓75.5%/铟24.5%，>99.99%，Sigma Aldrich，大韩民国）的接触角使用滴分析仪（DSA100S,KRUSS,徉。 EGaIn (gallium75.5%/indium24.5%,>99.99%, Sigma Aldrich, 大韩民国) e ile ea lekanyetsoa ho sebelisoa analyzer ea puisano (DSA100S, KRUSS, Germany). Краевой угол EGaIn (галлий 75,5%/индий 24,5%, >99,99%, Sigma Aldrich, Республика Корея) измеряли с помощью анализатора формRUSSES ка,DруSA ка,DруSA капли0 Sekhahla sa bohale sa EGaIn (gallium 75.5% / indium 24.5%, > 99.99%, Sigma Aldrich, Rephabliki ea Korea) se ile sa lekanyetsoa ho sebelisoa sebopeho sa cap analyzer (DSA100S, KRUSS, Jeremane).Beha substrate ka phaposing ea khalase ea 5 × 5 cm × 5 cm 'me u behe lerotholi la 4-5 μl la EGaIn holim'a substrate u sebelisa serinji ea bophara ba 0.5 mm.Ho theha mouoane oa HCl, 20 μL ea tharollo ea HCl (37 wt.%, Samchun Chemicals, Republic of Korea) e ile ea behoa haufi le substrate, e ileng ea fetoha mouoane ho lekana ho tlatsa kamore ka hare ho 10 s.
Bokaholimo bo ne bo nkuoa ho sebelisoa SEM (Tescan Vega 3, Tescan Korea, Rephabliki ea Korea).EDS (Tescan Vega 3, Tescan Korea, Rephabliki ea Korea) e ne e sebelisetsoa ho ithuta tlhahlobo ea boleng ba boleng le kabo.EGaIn/Cu/PDMS top topography e ile ea hlahlojoa ho sebelisoa profilometer ea optical (The Profilm3D, Filmetrics, USA).
Ho etsa lipatlisiso tsa phetoho ea conductivity ea motlakase nakong ea lipotoloho tse otlollang, lisampole tse nang le EGaIn le ntle le eona li ne li tlameletsoe lisebelisoa tse otlollang (Bending & Stretchable Machine System, SnM, Rephabliki ea Korea) mme li ne li hokahantsoe ka motlakase ho mitha ea mohloli oa Keithley 2400. Ho etsa lipatlisiso tsa phetoho ea conductivity ea motlakase nakong ea lipotoloho tse otlollang, lisampole tse nang le EGaIn le ntle le eona li ne li tlameletsoe lisebelisoa tse otlollang (Bending & Stretchable Machine System, SnM, Rephabliki ea Korea) mme li ne li hokahantsoe ka motlakase ho mitha ea mohloli oa Keithley 2400. Для исследования изменения электропроводности во время циклов растяжения образцы с EGaIn и без него закрепляли на оборудования для, Регера для оборудовании для публика Корея) и электрически подключали к измерителю источника Keithley 2400. Ho ithuta phetoho ea conductivity ea motlakase nakong ea ho otlolla lipotoloho, lisampole tse nang le EGaIn le ntle le tsona li ile tsa beoa mochining o otlollang (Bending & Stretchable Machine System, SnM, Republic of Korea) mme o hokahantsoe ka motlakase ho meter ea mohloli oa Keithley 2400.Ho ithuta phetoho ea conductivity ea motlakase nakong ea ho otlolla lipotoloho, lisampole tse nang le EGaIn le ntle le tsona li ne li kenngoa mochine o otlollang (Bending and Stretching Machine Systems, SnM, Republic of Korea) le motlakase o kopantsoeng le Keithley 2400 SourceMeter.E lekanya phetoho ea khanyetso ho tloha ho 0% ho isa ho 70% ea mofuta oa sampole.Bakeng sa teko ea botsitso, phetoho ea khanyetso e ile ea lekanngoa ho feta 4000 30% cycles strain cycles.
Bakeng sa tlhaiso-leseling e batsi mabapi le moralo oa thuto, bona bukana ea thuto ea Tlhaho e hokahaneng le sengoloa sena.
Lintlha tse tšehetsang liphetho tsa phuputso ena li hlahisoa Lifaeleng tsa Tlatsetso ea Boitsebiso le Raw Data.Sengoliloeng sena se fana ka lintlha tsa mantlha.
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